MOS only nano-watt sub-bandgap voltage reference

This paper presents a nano-watt bandgap voltage reference (BGR). The self-cascode structure is provided as proportional-to-absolute-temperature (PTAT) voltage. Due to the low slope of PTAT voltage, divider consisting five similar MOSFET transistors presented. resulting output will be one-fifth complementary-to-absolute-temperature and four-fifths All MOSFETs are standard CMOS biased in sub-threshold region where one them utilized diode. Post-layout simulation results using 0.18 µm process show nominal 0.132 V. power consumption 12.7 nW at 0.7 V supply. average temperature coefficient (TC) about 28.5 ppm/°C over range 0 °C–100 °C. proposed BGR occupies small area 0.00083 mm2.